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 (1) In-circuit resistance measures of modules A1 and A2.
NOTE
Unless specified otherwise, all transistors are typed 2N2222. All measurements should be within 50 per-
R
X
10K
20K
R
X
100
R
X
100
Q1
820
820
A1
R
X
10K
R
X
100
R
X
10K
R
X
100
20K
860
R
X
10K
840
Q2
20K
R
X
100
R
X
100
R
X
10K
860
R
X
10K
Q3
840
10K
R
X
10K
R
X
100
R
X
100
860
R
X
10K
840
Q4
R
X
100
14K
R
X
10K
R
X
100
R
X
10K
860
860
Q5
R
X
100
R
X
10K
2 Mego
R
X
100
R
X
10K
1.2 Mego
860
840
Q6
R
X
10K
R
X
100
R
X
10K
R
X
l00
25 Mego
1.2 Mego
860
860
Q7
A2
F
X
100
10K
R X 10K
R
X
10K
R
X
100
Q1
860
860
R
X
10K
R X 10K
R
X
100
860
840
30K
R
X
100
Q9
Q10
R
X
l00
R
X
10K
55K
R X 10K
840
840
R
X
100
7K
R X 10K
R
X
100
R
X
10K
840
810
Qll
R
X
100
3K
R X 10K
R
X
100
R
X
10K
840
840
Ql2
R
X
100
--------
R
X
10K
R
X
100
Q13
R
X
100
840
840
3K
R
X
100
R
X
10K
R X 10K
R
X
100
3K
830
Q14
820
(2) In-circuit resistance measurements of module A 3
NOTE
Unless specified otherwise, all transistors are type 2N2222. All measurement should be within 50 per-
c e n t of values shown.
Q1
660
R X 100
R X 100
R X 10K
5 Meg
R X 10K
580
20K
(2N1434)
650
760
640
R X 100
R X 100
R X 100
500K
R X 10K
Q2
R X 100
(2N3251)
R X 100
880
860
20K
R X 10K
R X 10K
28K
Q4
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